IRFR7546TRPBF vs IRFH5015TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR7546TRPBF disebabkan oleh Infineon dan IRFH5015TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR7546TRPBF IRFH5015TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology StrongIRFET IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) 20 V (max) —
Drain Current (ID) at TC=25C 71 A —
Continuous Drain Current (ID) at TC=25C (bond-wire limited) 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max @ VGS=10V 7.9 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] 33 nC
Power Dissipation (PD) at TC=25C 99 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan DPAK (TO-252AA) 8-PQFN (5x6) SuperSO8
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / PBF Yes (TRPBF suffix) —
Status RoHS Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS single-pulse] —
Aras MSL [DATA_NEEDED: MSL rating] —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TA=25C — 10 A
Continuous Drain Current (ID) at TC=25C — 56 A
On-Resistance (RDS(on)) max — 31 mOhm
Power Dissipation (TA=25C) — 3.6 W
Power Dissipation (TC=25C) — 156 W
Gate Drive Voltage (VGS recommended) — 10 V
Configuration — Single with built-in body diode
Suhu Operasi — -55C to +150C (TJ max)

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