IRFR9024NTRLPBF vs IRFR5505TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR9024NTRLPBF disebabkan oleh Infineon dan IRFR5505TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR9024NTRLPBF IRFR5505TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -11 A -18 A
On-Resistance RDS(on) max at VGS=-10V 175 mOhm 110 mOhm
Gate-Source Voltage (VGS) max +/-20 V +/-20 V
Power Dissipation (PD) at TC=25C 38 W —
Gate Charge (Qg) typical 12.7 nC —
Package Type TO-252AA (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Drain, Gate, Source + Tab) —
Technology HEXFET (Generation 5) IR MOSFET (HEXFET 5th generation)
Gambaran Suhu Operasi -55C to +175C —
Lead-Free / RoHS Yes (LPBF suffix) —
Reel Orientation Left (TRL suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Series — HEXFET
Drain-Source Voltage (VDS) max — -55 V
Pulsed Drain Current (IDM) — -72 A
Total Gate Charge (Qg) — 21.3 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Rise Time (tr) — [DATA_NEEDED: tr]
Fall Time (tf) — [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C — 57 W
Suhu Hubungan Operasi — -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) — 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 50 C/W (typical, DPAK on 1 oz copper)
Kemasan — TO-252AA (DPAK), surface mount
Status RoHS — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)

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