IRFR9120NTRLPBF vs IRFR5305TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR9120NTRLPBF disebabkan oleh Infineon dan IRFR5305TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR9120NTRLPBF | IRFR5305TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | -55 V |
| Continuous Drain Current (ID) | -6.6 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) range] |
| On-Resistance (RDS(on)) | 480 mOhm max @ VGS = -10 V | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Power Dissipation (PD) | 40 W (Tc) | — |
| Gambaran Suhu Operasi | -55C to +150C (Tj) | — |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Technology | IR MOSFET (planar) | HEXFET fifth-generation planar MOSFET |
| Aras MSL | 1 | — |
| Status RoHS | Compliant (Pb-free) | — |
| Lead-Free | Yes | — |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS | — | Yes (Pb-free, suffix "PBF") |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |