IRFZ34NPBF vs IRFR3411TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ34NPBF disebabkan oleh Infineon dan IRFR3411TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ34NPBF IRFR3411TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Status Active —
FET Type N-Channel, Enhancement Mode MOSFET (Metal Oxide)
Technology HEXFET (Planar DMOS, 5th generation) HEXFET Power MOSFET (IR)
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
Gambaran Suhu Operasi -55 C to +175 C -55 C to +175 C
Maximum Junction Temperature 175 C 175 C
Kemasan TO-220AB (3-pin + tab, through-hole) TO-252AA (DPAK)
Jenis Pemasangan Through Hole Surface Mount
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard —
Status RoHS Compliant —
Configuration Single N-Channel, 3-pin (3+tab) —
Polarity — N-Channel
V(BR)DSS (Drain-Source Breakdown Voltage) — 100 V
RDS(on) max @ VGS=10V — 44 mOhm
Continuous Drain Current (Id) @ Tc — 32 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Pd) @ Tc — 130 W
Gate Charge (Qg) — 48 nC
Operating Mode — Enhancement
Bilangan Pin — 3
Avalanche Rated — Yes (fully avalanche rated)
dv/dt Rating — Dynamic dv/dt rated
Lead-Free / RoHS — Yes (Lead-free, PBF suffix)

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