IRFZ44NPBF vs IRF530NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ44NPBF disebabkan oleh Infineon dan IRF530NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFZ44NPBF | IRF530NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 49 A | 17 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | — |
| Total Gate Charge (Qg) | 42 nC | 24.7 nC |
| Power Dissipation (PD) at Tc=25C | 94 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-220AB (3-pin + tab) | — |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET (Planar Stripe Cell) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | — |
| Status RoHS | Compliant | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 100 V |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 90 mOhm |
| Power Dissipation (Pd) at Tc=25C | — | 70 W |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Package Type | — | D2PAK (TO-263), 3-pin (2 + tab) |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant |
| Qualification Market | — | Industrial |