IRFZ44NSTRLPBF vs IRF540NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ44NSTRLPBF disebabkan oleh Infineon dan IRF540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFZ44NSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | — |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 C to +175 C |
| Kemasan | D2PAK (TO-263) | D2PAK (TO-263), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (IR MOSFET) |
| Status RoHS | Compliant | Compliant (Pb-free) |
| Lead-Free (PBF suffix) | Yes | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Packaging | — | Tape & Reel (13-inch reel) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |