IRFZ44NSTRLPBF vs IRF540NSTRLPBF 比較
詳細並排比較 IRFZ44NSTRLPBF 由 Infineon 與 IRF540NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFZ44NSTRLPBF | IRF540NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC | 49 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Drain-Source On-Resistance RDS(on) max | 17.5 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 42 nC | — |
| Power Dissipation (TC) | 94 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| 工作溫度範圍 | -55C to +175C | -55 C to +175 C |
| 封裝 | D2PAK (TO-263) | D2PAK (TO-263), surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (IR MOSFET) |
| RoHS 狀態 | Compliant | Compliant (Pb-free) |
| Lead-Free (PBF suffix) | Yes | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 33 A |
| Pulsed Drain Current (Idm) | — | 110 A (per datasheet pulse curve) |
| On-Resistance Rds(on) max at Vgs=10V | — | 44 mOhm |
| Gate Threshold Voltage Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge Qg | — | 47.3 nC (typical) |
| Power Dissipation (Pd) at Tc=25C | — | 130 W |
| Packaging | — | Tape & Reel (13-inch reel) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized) |