IRLB4030PBF vs IRLR2908TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB4030PBF disebabkan oleh Infineon dan IRLR2908TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLB4030PBF | IRLR2908TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 87 nC | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] | — |
| Power Dissipation (PD) at Tc | 370 W | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan | TO-220AB | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Technology | HEXFET (StrongIRFET family) | HEXFET (IR MOSFET) |
| Logic Level Drive | Yes (optimized for 4.5 V to 10 V VGS) | — |
| Qualification | JEDEC | — |
| Status RoHS | Compliant | — |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) at Tc=25C | — | 30 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm pulsed value] |
| On-Resistance RDS(on) max @ Vgs=10V | — | 28 mOhm |
| On-Resistance RDS(on) typ @ Vgs=10V | — | 22.5 mOhm |
| Gate Charge (Qg) typ | — | 22 nC |
| Power Dissipation (Pd) at Tc=25C | — | 120 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) range] |
| Configuration | — | Single with built-in diode |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |