IRLB8748PBF vs IRFB4110PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB8748PBF disebabkan oleh Infineon dan IRFB4110PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLB8748PBF IRFB4110PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $1.55
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) at TC=25C 92 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 4.5 mΩ
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V ±20 V
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical —
Power Dissipation (PD) at TC=25C 75 W —
Gambaran Suhu Operasi -55C to +175C (junction) —
Package Type TO-220AB through-hole —
Jenis Pemasangan Through Hole Through Hole
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
Status RoHS Compliant (Pb-free PBF suffix) Compliant (Pb-free suffix)
Qualification Standard JEDEC (Industrial market per datasheet) —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Kemasan — TO-220AB (through-hole)
Technology — HEXFET (planar DMOS)
Lead-Free — Yes (PBF suffix denotes Pb-free)

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