IRLR120NTRPBF vs IRFR220NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR120NTRPBF disebabkan oleh Infineon dan IRFR220NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR120NTRPBF IRFR220NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (Fifth Generation, planar) HEXFET (IR MOSFET)
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 10 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] —
Rds(on) Max at Vgs=10V 185 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Total Gate Charge (Qg) 13.3 nC 15 nC (typical per Mouser listing)
Power Dissipation (Pd) at Tc=25C 48 W —
Gambaran Suhu Operasi -55C to +175C (junction) —
Kemasan TO-252AA (DPAK), 3-pin surface mount TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Energy Rating Fully avalanche rated —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Aras MSL 1 1 (unlimited floor life per JEDEC J-STD-020)
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Maximum Power Dissition (PD) at TC=25°C — 43 W
Suhu Hubungan Operasi — -55°C to +150°C
Status RoHS — Compliant (PBF suffix)
Avalanche Energy Rated — Yes (fully characterized)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

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