IRLR120NTRPBF vs IRFR220NTRPBF 比較

詳細並排比較 IRLR120NTRPBF 由 Infineon 與 IRFR220NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF ✓ 啟用中
Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF ✓ 啟用中

規格比較

參數 IRLR120NTRPBF IRFR220NTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (Fifth Generation, planar) HEXFET (IR MOSFET)
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 10 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] —
Rds(on) Max at Vgs=10V 185 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Total Gate Charge (Qg) 13.3 nC 15 nC (typical per Mouser listing)
Power Dissipation (Pd) at Tc=25C 48 W —
工作溫度範圍 -55C to +175C (junction) —
封裝 TO-252AA (DPAK), 3-pin surface mount TO-252AA (DPAK), surface mount
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rating Fully avalanche rated —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
MSL 等級 1 1 (unlimited floor life per JEDEC J-STD-020)
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Maximum Power Dissition (PD) at TC=25°C — 43 W
工作接面溫度 — -55°C to +150°C
RoHS 狀態 — Compliant (PBF suffix)
Avalanche Energy Rated — Yes (fully characterized)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

資料表與資源

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