IRLR120NTRPBF vs IRLB4030PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR120NTRPBF disebabkan oleh Infineon dan IRLB4030PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR120NTRPBF | IRLB4030PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Fifth Generation, planar) | HEXFET (StrongIRFET family) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 10 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Idm] | — |
| Rds(on) Max at Vgs=10V | 185 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Total Gate Charge (Qg) | 13.3 nC | 87 nC |
| Power Dissipation (Pd) at Tc=25C | 48 W | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55C to +175C |
| Kemasan | TO-252AA (DPAK), 3-pin surface mount | TO-220AB |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Avalanche Energy Rating | Fully avalanche rated | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Aras MSL | 1 | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (PD) at Tc | — | 370 W |
| Logic Level Drive | — | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | — | JEDEC |
| Status RoHS | — | Compliant |