IRLR120NTRPBF vs IRLB4030PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLR120NTRPBF tarafından Infineon ve IRLB4030PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLR120NTRPBF | IRLB4030PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (Fifth Generation, planar) | HEXFET (StrongIRFET family) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 10 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Idm] | — |
| Rds(on) Max at Vgs=10V | 185 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: typical Vgs(th)] | — |
| Total Gate Charge (Qg) | 13.3 nC | 87 nC |
| Power Dissipation (Pd) at Tc=25C | 48 W | — |
| İşletim Sıcaklığı Aralığı | -55C to +175C (junction) | -55C to +175C |
| Paket | TO-252AA (DPAK), 3-pin surface mount | TO-220AB |
| Montaj Türü | Surface Mount | Through Hole |
| Avalanche Energy Rating | Fully avalanche rated | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| MSL Seviyesi | 1 | — |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (PD) at Tc | — | 370 W |
| Logic Level Drive | — | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | — | JEDEC |
| RoHS Durumu | — | Compliant |