IRLR2905TRPBF vs IRLR2705TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR2905TRPBF disebabkan oleh Infineon dan IRLR2705TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR2905TRPBF | IRLR2705TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | IR MOSFET (HEXFET, 5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes / Compliant | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited floor life at <30C / 85% RH) |
| Gate Drive | Logic-level compatible | — |
| Jenis Transistor | — | N-Channel MOSFET (HexFET) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 28 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 40 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (logic-level) |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Power Dissipation (PD) at TC=25C | — | 68 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |
| Configuration | — | Single N-Channel |