IRLR2905TRPBF vs IRLR2705TRLPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLR2905TRPBF tarafından Infineon ve IRLR2705TRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLR2905TRPBF | IRLR2705TRLPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | IR MOSFET (HEXFET, 5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Paket | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Montaj Türü | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | 1 (unlimited floor life at <30C / 85% RH) |
| Gate Drive | Logic-level compatible | — |
| Transistor Türü | — | N-Channel MOSFET (HexFET) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 28 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 40 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (logic-level) |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Power Dissipation (PD) at TC=25C | — | 68 W |
| İşletim Sıcaklığı Aralığı | — | -55C to +175C |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |
| Configuration | — | Single N-Channel |