IRLR2905TRPBF vs IRLR2705TRLPBF 比較
詳細並排比較 IRLR2905TRPBF 由 Infineon 與 IRLR2705TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR2905TRPBF | IRLR2705TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, fifth generation) | IR MOSFET (HEXFET, 5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max @ VGS=10V | 27 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Qg) | 32 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (unlimited floor life at <30C / 85% RH) |
| Gate Drive | Logic-level compatible | — |
| 電晶體類型 | — | N-Channel MOSFET (HexFET) |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 28 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 40 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (logic-level) |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Power Dissipation (PD) at TC=25C | — | 68 W |
| 工作溫度範圍 | — | -55C to +175C |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |
| Configuration | — | Single N-Channel |