IRLS3036TRLPBF vs IRFB4020PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLS3036TRLPBF disebabkan oleh Infineon dan IRFB4020PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLS3036TRLPBF IRFB4020PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Technology IR HEXFET (planar DMOS) IR MOSFET (HEXFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25C 270 A —
Continuous Drain Current (Id) at Tc=100C 195 A —
Pulsed Drain Current (Idm) 1100 A —
Rds(on) max @ Vgs=10V 1.9 mOhm —
Gate-Source Threshold Voltage (Vgs(th)) Logic level (see datasheet for exact value) [DATA_NEEDED: Vgs(th) typical/min/max] —
Total Gate Charge (Qg) typ 91 nC —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max +/- V] —
Power Dissipation (Pd) at Tc=25C 380 W —
Gambaran Suhu Operasi -55C to +175C —
Kemasan D2PAK (TO-263), surface mount TO-220AB (through-hole)
Jenis Pemasangan Surface Mount Through Hole
Aras MSL 1 —
Status RoHS Compliant (PBF suffix) —
Lead-Free Yes (PBF suffix) —
Integrated Body Diode Yes (avalanche rated) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC — 18 A
Power Dissipation (PD) at TC — 100 W
RDS(on) Maximum — 100 mOhm
Gate-Source Voltage (VGS) Maximum — 20 V
Thermal Resistance, Junction-to-Case (RthJC) — 1.43 C/W
Suhu Hubungan Operasi — 175 C (max)
Kiraan Pin — 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) — Yes
Market Qualification — Consumer
Recommended Use — Class-D audio amplifier and high-efficiency switching applications

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