ISC011N04NM7VATMA1 vs IGL65R080D2XUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC011N04NM7VATMA1 disebabkan oleh Infineon dan IGL65R080D2XUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC011N04NM7VATMA1 | IGL65R080D2XUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | CoolGaN G5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 650 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | GaN-on-Si, 200 mm wafer |
| Kemasan | PG-TDSON-8 (source-down) | PG-TSON-8-U06 (ThinPAK 8x8) |
| Jenis Pemasangan | Surface Mount | Surface Mount, wettable flank |
| Short-Circuit Withstand | Yes (current-limited) | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (TJ) | -55 °C to +150 °C (TJ) |
| RoHS Compliance | Compliant (per Infineon product page) | — |
| Aras MSL | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, where stated) |
| Jenis Transistor | — | N-Channel GaN HEMT (enhancement-mode) |
| Continuous Drain Current (ID, Tc) | — | 18 A |
| Power Dissipation (PD, Tc) | — | 81 W |
| On-Resistance RDS(on) | — | 80 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Typical Applications | — | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| Status RoHS | — | Compliant |