ISC015N06NM5ATMA1 vs BSC028N06NSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5ATMA1 disebabkan oleh Infineon dan BSC028N06NSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC015N06NM5ATMA1 BSC028N06NSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 33 A 24 A
Pulsed Drain Current (IDM) at TC=25C 259 A —
On-Resistance RDS(on) typical at VGS=10V 1.5 mOhm —
Total Power Dissipation (TA) 3 W —
Total Power Dissipation (TC) 188 W —
Kemasan PG-TDSON-8 (PQFN 5x6) Drain-Down PG-TDSON-8-7 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C —
Technology Trench MOSFET (OptiMOS 5) MOSFET N-Channel (OptiMOS 5)
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) 1 —
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
Suhu Hubungan Operasi — -55C to +175C
Boson Bebas — Yes
Aras MSL — 1
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

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