ISC015N06NM5ATMA1 vs IAUA210N10S5N024AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC015N06NM5ATMA1 disebabkan oleh Infineon dan IAUA210N10S5N024AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC015N06NM5ATMA1 IAUA210N10S5N024AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 5
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 33 A —
Pulsed Drain Current (IDM) at TC=25C 259 A —
On-Resistance RDS(on) typical at VGS=10V 1.5 mOhm —
Total Power Dissipation (TA) 3 W —
Total Power Dissipation (TC) 188 W —
Kemasan PG-TDSON-8 (PQFN 5x6) Drain-Down PG-HSOF-5-4 (7×8 mm² sTOLL)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C -55°C to +175°C (TJ)
Technology Trench MOSFET (OptiMOS 5) MOSFET (Metal Oxide), N-Channel
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) 1 —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ Tj — 210 A
Continuous Drain Current (ID) @ TC=25°C — [DATA_NEEDED: ID at TC=25°C]
On-Resistance RDS(on) Max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th) value]
Gate Charge Qg (typ) — [DATA_NEEDED: Qg typ @ VGS=10V]
Power Dissipation (PD) @ TC=25°C — 238 W
Automotive Qualification — AEC-Q101
Lead-Free — Yes
Aras MSL — [DATA_NEEDED: MSL rating]
Avalanche Energy Rated — Yes (per datasheet)

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