K4A8G085WB-BCTD vs K4A8G085WB-BICH Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCTD disebabkan oleh Samsung Electronics dan K4A8G085WB-BICH disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCTD - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung
K4A8G085WB-BCTD ✓ Aktif
Pengandingan Spesifikasi
| Parametr | K4A8G085WB-BCTD | K4A8G085WB-BICH |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $8.53 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 2666 Mbps | 2400 Mbps (DDR4-2400) |
| Tegangan Pemberi Arus | 1.2 V | 1.2V |
| Die Revision | B-die | B-die |
| Kemasan | FBGA-78 (78-ball TFBGA) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Bank Structure | 16 banks, 4 bank groups | — |
| Burst Length | BL8 | BL8, BL16 |
| Termination | On-Die Termination (ODT), dynamic ODT | — |
| Ciri-ciri | ZQ calibration, CRC, CA parity, asynchronous reset | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | 0°C to 85°C |
| Speed Bin | -BCTD (CL-tRCD-tRP bin) | — |
| Terminations | 78 | — |
| JEDEC-30 Package Code | R-PBGA-B78 | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Max Supply Current | — | 170mA |
| Latensi CAS | — | Programmable |
| On-Die ECC | — | Yes |
| Data Bus Inversion | — | Yes |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |