K4A8G085WB-BITD vs K4A8G085WB Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BITD disebabkan oleh Samsung Electronics dan K4A8G085WB disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WB-BITD | K4A8G085WB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 2666 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | -40°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 78FBGA | 78-pin FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 78 | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| Antaramuka | Parallel | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |