K4A8G085WB-BITD vs K4A8G085WB 比較
詳細並排比較 K4A8G085WB-BITD 由 Samsung Electronics 與 K4A8G085WB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WB-BITD | K4A8G085WB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| 組織 | 1G x 8 | 1G x 8 |
| 資料速率 | 2666 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| 供應電壓 | 1.2 V | 1.2 V |
| 工作溫度 | -40°C to +95°C | [DATA_NEEDED: operating temperature range] |
| 封裝 | 78FBGA | 78-pin FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 78 | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | — |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| 介面 | Parallel | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |