K4A8G085WB vs K4A8G085WB-BIRC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB disebabkan oleh Samsung Electronics dan K4A8G085WB-BIRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G085WB K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB ✓ Aktif
Samsung Electronics
K4A8G085WB-BIRC K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G085WB-BIRC ✓ Aktif

Pengandingan Spesifikasi

Parametr K4A8G085WB K4A8G085WB-BIRC
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $6.56
Jenis Ingatan DDR4 SDRAM (B-die) DDR4 SDRAM
Density 8 Gbit 8 Gb
Organisasi 1G x 8 1G x 8
Tegangan Pemberi Arus 1.2 V 1.2 V
Kemasan 78-pin FBGA 78-FBGA
Jenis Pemasangan Surface Mount Surface Mount
Operating Mode DLL Enabled mode (per datasheet) —
Speed Grade Suffixes -BCRC, -BIRC, -BCTD, -BCPB (per family naming) —
Kadar Data [DATA_NEEDED: speed grade data rate in Mbps] 2400 Mbps
tCL/cas latency [DATA_NEEDED: CAS latency] —
Suhu Operasi [DATA_NEEDED: operating temperature range] -40°C to 95°C
Refresh [DATA_NEEDED: refresh rate 1x/2x] —
Bank Groups [DATA_NEEDED: bank/bank group count] —
Package Dimensions [DATA_NEEDED: package dimensions] —
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Status RoHS [DATA_NEEDED: RoHS status] —
Termination Voltage (VTT) [DATA_NEEDED: VTT value] —
Number of Terminals — 78
Refresh Cycles — 8192
Die Family — B-die
Latensi CAS — [DATA_NEEDED: CAS Latency]
Burst Length — 8, 16
Antaramuka — SSTL-12
RoHS — Compliant

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