K4A8G085WB vs K4A8G085WB-BIRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB sa pamamagitan ng Samsung Electronics at K4A8G085WB-BIRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A8G085WB | K4A8G085WB-BIRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $6.56 |
| Uri ng Memory | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasyon | 1G x 8 | 1G x 8 |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Packhaging | 78-pin FBGA | 78-FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Mode | DLL Enabled mode (per datasheet) | — |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) | — |
| Rate ng Data | [DATA_NEEDED: speed grade data rate in Mbps] | 2400 Mbps |
| tCL/cas latency | [DATA_NEEDED: CAS latency] | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40°C to 95°C |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Termination Voltage (VTT) | [DATA_NEEDED: VTT value] | — |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Die Family | — | B-die |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8, 16 |
| Interface | — | SSTL-12 |
| RoHS | — | Compliant |