K4A8G085WB vs K4A8G085WB-BIRC 比較
詳細並排比較 K4A8G085WB 由 Samsung Electronics 與 K4A8G085WB-BIRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WB | K4A8G085WB-BIRC |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $6.56 |
| 記憶體類型 | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| 供應電壓 | 1.2 V | 1.2 V |
| 封裝 | 78-pin FBGA | 78-FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Mode | DLL Enabled mode (per datasheet) | — |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) | — |
| 資料速率 | [DATA_NEEDED: speed grade data rate in Mbps] | 2400 Mbps |
| tCL/cas latency | [DATA_NEEDED: CAS latency] | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40°C to 95°C |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Termination Voltage (VTT) | [DATA_NEEDED: VTT value] | — |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Die Family | — | B-die |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8, 16 |
| 介面 | — | SSTL-12 |
| RoHS | — | Compliant |