K4A8G085WC-BCRC vs K4A8G085WC-BCTD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCRC disebabkan oleh Samsung Electronics dan K4A8G085WC-BCTD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Bahagian terakhir untuk beliPengandingan Spesifikasi
| Parametr | K4A8G085WC-BCRC | K4A8G085WC-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Masa Terakhir Dibeli |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kadar Data | 2400 Mbps (DDR4-2400) | 2666 Mbps (PC4-2133) |
| Kemasan | 78-ball FBGA (TFBGA) | 78-ball FBGA (78FBGA) |
| Terminal Pitch | 0.8 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +95C | 0C to +95C |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| CRC Function | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Refresh | Auto/Self refresh | — |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V (1.14 V to 1.26 V) |
| Ball Pitch | — | 0.8 mm |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Jenis Antaramuka | — | Synchronous, parallel |