K4A8G085WC vs K4A8G085WC-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC disebabkan oleh Samsung Electronics dan K4A8G085WC-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WC | K4A8G085WC-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Speed | 2666 Mbps/pin (DDR4-2666) | — |
| Tegangan Pemberi Arus | 1.2 V | — |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | — |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | — |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | — |
| Kemasan | 78-ball FBGA (78FBGA) | 78-FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask (DM) | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Kadar Data | — | 3200 Mbps |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Gambaran Suhu Operasi | — | -40°C to +95°C |
| Antaramuka | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |