K4A8G085WC vs K4A8G085WC-BIWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC sa pamamagitan ng Samsung Electronics at K4A8G085WC-BIWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WC | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasyon | 1G x 8 | 1G x 8 |
| Speed | 2666 Mbps/pin (DDR4-2666) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | — |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | — |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | — |
| Packhaging | 78-ball FBGA (78FBGA) | 78-FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask (DM) | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Rate ng Data | — | 3200 Mbps |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Hanay ng Temperature na Operasyon | — | -40°C to +95°C |
| Interface | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensya ng CAS | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |