K4A8G085WC vs K4A8G085WC-BIWE 比較
詳細並排比較 K4A8G085WC 由 Samsung Electronics 與 K4A8G085WC-BIWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ 啟用中規格比較
| 參數 | K4A8G085WC | K4A8G085WC-BIWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| Speed | 2666 Mbps/pin (DDR4-2666) | — |
| 供應電壓 | 1.2 V | — |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Clock Frequency | 1333 MHz (1333.333 GHz nominal, per web data) | — |
| Operating Temperature (K4A8G085WC-BITD) | -40 C to +95 C | — |
| Operating Temperature (K4A8G085WC-BCTD) | 0 C to +95 C | — |
| 封裝 | 78-ball FBGA (78FBGA) | 78-FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Data Mask (DM) | Yes | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| 資料速率 | — | 3200 Mbps |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| 工作溫度範圍 | — | -40°C to +95°C |
| 介面 | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS 延遲 | — | 22 (CL22) |
| Refresh | — | Auto-refresh, self-refresh |
| Lead-Free | — | Yes |