K4AAG085WA-BCTD vs K4AAG085WA-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG085WA-BCTD disebabkan oleh Samsung Electronics dan K4AAG085WA-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG085WA-BCTD | K4AAG085WA-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) | 16 Gbit |
| Organisasi | 2G x 8 | 2G x 8 |
| Kadar Data | 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kemasan | 78-ball FBGA (78FBGA) | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) |
| Suhu Operasi | 0C to +85C | 0 C to 85 C |
| Speed Grade | DDR4-2666 (-BCTD) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 parallel, JEDEC DDR4 ballout | JEDEC DDR4 |
| Status RoHS | Compliant | Compliant (per JLCPCB listing) |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) | — |
| Burst Length | BL8 (DDR4 standard) | — |
| Application Domain | Computing, networking, industrial memory | — |
| Manufacturing Standard | JEDEC DDR4 SDRAM | — |
| Lead Time / Stock | [DATA_NEEDED: current stock status] | — |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Memory Width | — | 8-bit |
| Refresh | — | Auto-refresh (per JEDEC DDR4) |
| Application Class | — | Main memory / embedded DRAM |
| Manufacturer | — | Samsung Electronics |