K4AAG165WA-BCWE vs K4AAG085WA-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG165WA-BCWE disebabkan oleh Samsung Electronics dan K4AAG085WA-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG165WA-BCWE | K4AAG085WA-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| Kadar Data | 3200 Mbps (DDR4-3200) | 3200 Mbps (DDR4-3200) |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Kemasan | 96-ball FBGA | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| Suhu Operasi | -40C to +95C | 0 C to 85 C |
| Jenis Antaramuka | Parallel, DDR4 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Memory Format | DRAM (Volatile) | — |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | — |
| Status RoHS | Compliant | Compliant (per JLCPCB listing) |
| Packaging | Tray | — |
| Product Status | Active | — |
| Density | — | 16 Gbit |
| Organisasi | — | 2G x 8 |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Antaramuka | — | JEDEC DDR4 |
| Memory Width | — | 8-bit |
| Refresh | — | Auto-refresh (per JEDEC DDR4) |
| Application Class | — | Main memory / embedded DRAM |
| Manufacturer | — | Samsung Electronics |