K4B4G1646E-BMK0 vs H5TC4G63CFR-H9J Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BMK0 disebabkan oleh Samsung Electronics dan H5TC4G63CFR-H9J disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BMK0 | H5TC4G63CFR-H9J |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | -H9 (1866 Mbps / PC3-14900) |
| Voltage | 1.35 V | — |
| Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 96-FBGA | 96-ball TFBGA |
| Antaramuka | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Kadar Data | 1600 Mbps | — |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Jenis Pemasangan | Surface Mount | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V +0.100/-0.067V |
| Number of Terminals | — | 96 |
| Temperature Grade | — | Industrial |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Clock Input | — | Fully differential (CK, CK) |
| Data Strobe | — | Differential (DQS, DQS) |
| On-Chip DLL | — | Yes |
| Data Mask (DM) | — | Yes |