K4B4G1646E-BYK0 vs K4B4G1646E-BYMATCV Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics dan K4B4G1646E-BYMATCV disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646E-BYK0 | K4B4G1646E-BYMATCV |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | 1.35 V |
| Kadar Data | DDR3-1600 (800 MHz) | 1866 Mbps |
| Kemasan | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA |
| Suhu Operasi | 0°C to +95°C (TC) | — |
| Latensi CAS | 11 (CL-tRCD-tRP) | Programmable (e.g., 13, 12, 11) |
| Burst Length | 8 (fixed), 4 (burst chop) | 8 (with burst chop 4) |
| On-Die Termination | Yes (dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | Yes |
| Self-Refresh | Yes | Yes |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Saiz Ingatan | — | 4 Gbit (256M x 16) |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Bilangan Pin | — | 96 |
| Gambaran Suhu Operasi | — | -40°C to +95°C |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Status RoHS | — | Compliant |