K4B4G1646F-BYK0 vs K4B4G1646D-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646F-BYK0 disebabkan oleh Samsung Electronics dan K4B4G1646D-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646F-BYK0 | K4B4G1646D-BYK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 256M x 16 | — |
| Tegangan Pemberi Arus | 1.35V / 1.5V | 1.35 V (1.5 V compatible) |
| Kadar Data | 1866 Mbps | 1600 Mbps (PC3-12800) |
| Clock Frequency | 933 MHz | — |
| Kemasan | 96-ball FBGA | 96-ball FBGA |
| Suhu Operasi | 0°C to 95°C (TC) | 0°C to 85°C |
| Antaramuka | Parallel | — |
| Burst Length | 8 and 4 | 8 (with burst chop 4) |
| Latensi CAS | Programmable | Programmable (e.g., 11, 10, 9) |
| On-Die Termination | Yes | Yes |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Density | — | 4 Gbit |
| Organisasi | — | 256M x 16 |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| RoHS Compliant | — | Yes |
| Bilangan Pin | — | 96 |
| Die Revision | — | D-die |