K4B4G1646Q vs K4B4G1646D-BCK00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646Q disebabkan oleh Samsung Electronics dan K4B4G1646D-BCK00 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646Q | K4B4G1646D-BCK00 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Lebar Bus Data | 16 bits | — |
| Tegangan Pemberi Arus | 1.35V | 1.35V (1.283V to 1.45V) |
| Kadar Data | 1866 Mbps (PC3-14900) | 1600 Mbps/pin |
| Kemasan | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Die | Q-die | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | Yes |
| RoHS Compliant | Yes | — |
| Burst Length | 8 (BL8) | 8, 4 (with burst chop) |
| On-Die Termination | Yes (ODT) | — |
| Latensi CAS | Programmable | 11 (at 1600 Mbps) |
| Suhu Operasi | [DATA_NEEDED: Operating temperature range] | 0°C to 95°C (Tcase) |
| Speed Grade | — | DDR3-1600 (800 MHz) |
| I/O Voltage | — | 1.35V |
| Number of Banks | — | 8 |
| RoHS | — | Compliant |