K4RHE086VP vs K4RHE165VB-BCWM Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4RHE086VP disebabkan oleh Samsung Electronics dan K4RHE165VB-BCWM disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4RHE086VP K4RHE086VP - Samsung 24Gb DDR5 DRAM | Samsung Electronics

K4RHE086VP - Samsung 24Gb DDR5 DRAM | Samsung Electronics

K4RHE086VP ✓ Aktif
Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

K4RHE165VB-BCWM ✓ Aktif

Pengandingan Spesifikasi

Parametr K4RHE086VP K4RHE165VB-BCWM
Merek Samsung Electronics Samsung Electronics
Kategori DDR5 Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR5 SDRAM DDR5 SDRAM
Density 24 Gb 24 Gb
Organisasi x8 1G x 16
Process Node 1a-class (D1a) —
Package Type FBGA —
Jenis Pemasangan Surface Mount Surface Mount
Jenis Antaramuka DDR5 (double data rate 5) —
Maximum Data Rate [DATA_NEEDED: speed bin data rate] —
Supply Voltage (VDD) [DATA_NEEDED: VDD in V] —
On-Die ECC Yes (DDR5 standard feature) —
Bank Groups [DATA_NEEDED: bank group count] —
Gambaran Suhu Operasi [DATA_NEEDED: temperature range] —
Merek Samsung Electronics —
Product Family Samsung K4RHE DDR5 series —
Typical Application Server / client DRAM modules —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Kadar Data — 5600 Mbps
Tegangan Pemberi Arus — 1.1 V
Kemasan — 106 FBGA
Suhu Operasi — 0 C to +85 C
Product Status — Mass Production
Antaramuka — Parallel, DDR5
Generation — DDR5
Application Segment — DDR5 memory modules and HPC systems
Speed Grade Suffix — BCWM
tCK (Clock Period) — [DATA_NEEDED: clock period]
Latensi CAS — [DATA_NEEDED: CAS latency]

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