K6X0808C1D-BF55 vs K6X0808C1D-GF55000 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF55 disebabkan oleh Samsung Electronics dan K6X0808C1D-GF55000 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifSamsung Electronics
K6X0808C1D-GF55000 - 32Kx8 Async SRAM 55ns | Samsung Semiconductor
K6X0808C1D-GF55000 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-BF55 | K6X0808C1D-GF55000 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Asynchronous SRAM | SRAM - Asynchronous |
| Saiz Ingatan | 256 Kbit | 256 Kbit |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 55 ns |
| Antaramuka | Parallel | Parallel |
| Tegangan Pemberi Arus | 5 V | 5 V |
| Technology | CMOS | Low-power CMOS |
| Kemasan | 28-SOP | 28-SOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | [DATA_NEEDED: operating current] |
| Control Signals | CE, OE, WE | CE, OE, WE (active low) |
| Memory Format | SRAM | Volatile, no refresh required |
| Clock Frequency | N/A (asynchronous) | — |
| Refresh | Not required (static memory) | — |
| Status RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Write Cycle Time | — | [DATA_NEEDED: write cycle time] |
| Jenis Output | — | Three-state, common data I/O |