K6X0808C1D-BF70 vs K6X0808C1D-GF70T00 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF70 disebabkan oleh Samsung Electronics dan K6X0808C1D-GF70T00 disebabkan oleh Samsung Electro-Mechanics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung
K6X0808C1D-GF70T00 ✓ AktifPengandingan Spesifikasi
| Parametr | K6X0808C1D-BF70 | K6X0808C1D-GF70T00 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | Asynchronous SRAM (CMOS) | SRAM - Asynchronous |
| Density | 256 Kbit | — |
| Organisasi | 32K x 8 | 32K x 8 |
| Access Time | 70 ns | 70 ns |
| Antaramuka | Parallel | Parallel |
| Technology | CMOS | CMOS |
| Kemasan | 28-SOP (PDSO28) | 28-SOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tegangan Pemberi Arus | [DATA_NEEDED: Supply Voltage] | 5 V |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| Suhu Operasi | 0C to +70C (commercial grade, BF suffix) | [DATA_NEEDED: operating temperature range] |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | Common Data I/O, TTL compatible |
| Status RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Address Bus | A0-A14 (15 address lines) | — |
| Saiz Ingatan | — | 256 Kbit |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: active current] |
| Clock / Refresh | — | Fully static, no clock or refresh required |
| Packaging | — | Tape & Reel (T00 suffix) |