K6X0808C1D-BF70 vs K6X0808C1D-GF70T00 比較
詳細並排比較 K6X0808C1D-BF70 由 Samsung Electronics 與 K6X0808C1D-GF70T00 由 Samsung Electro-Mechanics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electro-Mechanics
K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung
K6X0808C1D-GF70T00 ✓ 啟用中規格比較
| 參數 | K6X0808C1D-BF70 | K6X0808C1D-GF70T00 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electro-Mechanics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 停產終止 | 啟用中 |
| 記憶體類型 | Asynchronous SRAM (CMOS) | SRAM - Asynchronous |
| Density | 256 Kbit | — |
| 組織 | 32K x 8 | 32K x 8 |
| Access Time | 70 ns | 70 ns |
| 介面 | Parallel | Parallel |
| Technology | CMOS | CMOS |
| 封裝 | 28-SOP (PDSO28) | 28-SOP |
| 安裝類型 | Surface Mount | Surface Mount |
| 供應電壓 | [DATA_NEEDED: Supply Voltage] | 5 V |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| 工作溫度 | 0C to +70C (commercial grade, BF suffix) | [DATA_NEEDED: operating temperature range] |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | Common Data I/O, TTL compatible |
| RoHS 狀態 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Address Bus | A0-A14 (15 address lines) | — |
| 記憶體容量 | — | 256 Kbit |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: active current] |
| Clock / Refresh | — | Fully static, no clock or refresh required |
| Packaging | — | Tape & Reel (T00 suffix) |