K6X0808C1D-BF70T vs K6F3216U6M-EF70T Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF70T disebabkan oleh Samsung Electronics dan K6F3216U6M-EF70T disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K6X0808C1D-BF70T | K6F3216U6M-EF70T |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | SRAM - Asynchronous | SRAM - Asynchronous |
| Saiz Ingatan | 256 Kbit | 32 Mbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 55 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| Suhu Operasi | -40C to +85C (TA) | [DATA_NEEDED: Operating Temperature Range] |
| Kemasan | 28-SOP | 55-TFBGA (7.5 x 12 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | — |
| Lebar Bus Data | 8 bit (I/O0-I/O7) | — |
| Control Signals | CE, OE, WE | — |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | None (static memory) |
| Status RoHS | Compliant | NO (per third-party listing) |
| Organisasi | — | 2M x 16 |
| Tegangan Pemberi Arus | — | 3 V |
| Antaramuka | — | Parallel |
| Technology | — | Full CMOS Static RAM |
| Speed Grade | — | -EF70 (55 ns) |
| Standard Pack Qty | — | 2400 |
| Memory Composition | — | Volatile SRAM |