K6X1008C2D-BF55 vs K6X1008C2D-BF70 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X1008C2D-BF55 disebabkan oleh Samsung Electro-Mechanics dan K6X1008C2D-BF70 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 ObsoleteSamsung Electronics
K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung
K6X1008C2D-BF70 NrndPengandingan Spesifikasi
| Parametr | K6X1008C2D-BF55 | K6X1008C2D-BF70 |
|---|---|---|
| Merek | Samsung Electro-Mechanics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | NRND |
| Jenis Ingatan | Asynchronous CMOS Static RAM (SRAM) | Volatile SRAM (asynchronous, static) |
| Memory Organization | 128K x 8 bit (1 Mbit) | 128K x 8 (1 Mbit total) |
| Density | 1 Mbit | — |
| Access Time | 55 ns | 70 ns |
| Supply Voltage (VCC) | 5 V (single supply) | [DATA_NEEDED: VCC range] |
| Operating Current (ICC) | 30 mA typical | — |
| Standby Current (ICC2) | [DATA_NEEDED: standby current value] | — |
| Antaramuka | Parallel, asynchronous | — |
| Lebar Bus Data | 8 bit | — |
| Address Bus Width | 17 bit | — |
| Kemasan | 32-SOP-525 (SOP-32) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature grade] | — |
| Data Retention Voltage | Low data retention voltage supported | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Lead-Free | Yes (Lead-Free variant) | — |
| Status RoHS | Compliant | — |
| Cell Technology | 6T CMOS memory cell | — |
| Number of Words | — | 131,072 |
| Bits per Word | — | 8 |
| Jenis Antaramuka | — | Parallel, asynchronous |
| I/O Compatibility | — | TTL-compatible |
| Operating Mode | — | Fully static (no clock, no refresh) |
| Package Type | — | 32-SOP-525 (PDSO32) |
| Speed Grade Suffix | — | BF70 (= 70 ns) |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: temperature grade] |
| Active Supply Current (ICC) | — | [DATA_NEEDED: ICC max] |
| CMOS Standby Current (ICC2) | — | [DATA_NEEDED: ICC2 max] |
| Output Enable (OE) Pin | — | Yes (three-state outputs) |
| Write Enable (WE) Pin | — | Yes |
| Chip Enable (CE) Pin | — | Yes |
| Lead-Free Finish | — | Yes (per datasheet revision history) |
| Process Technology | — | Low-power CMOS |