K9F2808Q0B vs K9F6408U0B Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9F2808Q0B disebabkan oleh Samsung Electronics dan K9F6408U0B disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ Akhir Hayat
Pengandingan Spesifikasi
| Parametr | K9F2808Q0B | K9F6408U0B |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Obsolete |
| Jenis Ingatan | SLC NAND Flash (parallel) | NAND Flash |
| Density | 128 Mbit | — |
| Organisasi | 16M x 8 | — |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | 2.7 V to 3.6 V |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | — |
| Antaramuka | 8-bit multiplexed address/data | 8-bit multiplexed command/address/data I/O |
| Kemasan | 63-pin TBGA | 44-TSOP2 |
| Temperature Grade | C (commercial), I (industrial) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | 528 bytes (512 data + 16 spare) |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block organization from datasheet] |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | 100K program/erase cycles |
| Status RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| Memory Organization | — | 8M x 8 bit (64Mbit) |
| Access Time / Cycle Time | — | 50 ns |
| Write Protect | — | Yes (WP pin) |
| Ready/Busy Output | — | Yes (R/B open-drain) |
| Operating Temperature (TCB0 grade) | — | 0C to 70C |
| Operating Temperature (TIB0 grade) | — | -40C to 85C |
| Production Status (per datasheet) | — | Mass Production (legacy; now obsolete) |