K9MDG08U5M vs K9LCG08U1M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9MDG08U5M disebabkan oleh Samsung Electronics dan K9LCG08U1M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9MDG08U5M | K9LCG08U1M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | MLC Large Block NAND Flash | NAND Flash, MLC |
| Density | 16 Gbit (2 GB) | 64 Gbit (8 GB) |
| Organisasi | 16G x 8 bit | x8 I/O |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Antaramuka | Asynchronous x8 multiplexed address/data | Asynchronous multiplexed NAND I/O |
| Kemasan | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | BGA |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Status RoHS | unknown | unknown |
| Tegangan Pemberi Arus | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |