K9XXG08U0M vs K9LCG08U1M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9XXG08U0M disebabkan oleh Samsung Electronics dan K9LCG08U1M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9XXG08U0M | K9LCG08U1M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Ingatan | NAND Flash | NAND Flash, MLC |
| Density | 8 G-bit | 64 Gbit (8 GB) |
| Organisasi | 1G x 8 bit | x8 I/O |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage] |
| Antaramuka | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous multiplexed NAND I/O |
| Page Read Time | 20 us | [DATA_NEEDED: page read time] |
| Kemasan | 48-pin TSOP-I | BGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |