M29F200FB55N3F2 vs M29F160FB55N3F2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FB55N3F2 disebabkan oleh Micron Technology dan M29F160FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29F200FB55N3F2 M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 ✓ Aktif
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

Pengandingan Spesifikasi

Parametr M29F200FB55N3F2 M29F160FB55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Obsolete
Jenis Ingatan Parallel NOR Flash Parallel NOR Flash
Density 2 Mbit (2097 kbits) 16777 kbits (16 Mbit)
Organisasi 256K x 8 bit / 128K x 16 bit 1 Mword x 16 bits / 2 Mbyte x 8 bits
Number of Words 128 K (x16 mode) 1000 k
Bits per Word 16 bits 16 bits
Supply Voltage (VCC) 5 V —
Access Time 55 ns 55 ns
Boot Block Architecture Bottom Boot Block (FB) Bottom Boot Block
Programming Embedded byte/word program algorithm —
Erase Embedded block erase controller —
Suhu Operasi -40C to +125C -40 to +125 C
Kemasan 48-TSOP I —
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Antaramuka Parallel Parallel
Status RoHS [DATA_NEEDED: RoHS compliance status] Compliant (lead-free)
Endurance [DATA_NEEDED: program/erase cycles] —
Tegangan Pemberi Arus — 5 V
Package Type — 48-TSOP
Termination Finish — Lead-free (F2 suffix)
Program/Erase Controller — Embedded byte/word program algorithms
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

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