M29F200FB55N3F2 vs M29F160FB55N3F2 比較
詳細並排比較 M29F200FB55N3F2 由 Micron Technology 與 M29F160FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F200FB55N3F2 | M29F160FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | Obsolete |
| 記憶體類型 | Parallel NOR Flash | Parallel NOR Flash |
| Density | 2 Mbit (2097 kbits) | 16777 kbits (16 Mbit) |
| 組織 | 256K x 8 bit / 128K x 16 bit | 1 Mword x 16 bits / 2 Mbyte x 8 bits |
| Number of Words | 128 K (x16 mode) | 1000 k |
| Bits per Word | 16 bits | 16 bits |
| Supply Voltage (VCC) | 5 V | — |
| Access Time | 55 ns | 55 ns |
| Boot Block Architecture | Bottom Boot Block (FB) | Bottom Boot Block |
| Programming | Embedded byte/word program algorithm | — |
| Erase | Embedded block erase controller | — |
| 工作溫度 | -40C to +125C | -40 to +125 C |
| 封裝 | 48-TSOP I | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| 介面 | Parallel | Parallel |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free) |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 供應電壓 | — | 5 V |
| Package Type | — | 48-TSOP |
| Termination Finish | — | Lead-free (F2 suffix) |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Block Protection | — | Hardware boot block protection |
| Speed Grade (from MPN) | — | 55 (55 ns) |