M29W064FT70N3E vs M29W064FB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W064FT70N3E disebabkan oleh Micron Technology dan M29W064FB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W064FT70N3E | M29W064FB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (Parallel) | NOR Flash, Parallel |
| Density | 64 Mbit | — |
| Organisasi | 8 Mb x8 or 4 Mb x16 | — |
| Antaramuka | Parallel, CFI compliant | Parallel, CFI compliant |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | 3.0 V to 3.6 V (3V/3.3V) |
| Boot Block Architecture | Top boot block (FT) | — |
| Suhu Operasi | -40C to +85C | -40C to +125C |
| Kemasan | 48-TSOP | 48-Pin TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| Saiz Ingatan | — | 64 Mbit (8M x 8 / 4M x 16) |
| Boot Block | — | Bottom boot block (FB variant) |
| Organization Switching | — | Byte/Word selectable via BYTE# pin |
| Reset/Power-Down | — | RP# pin |
| Data Protection | — | Block protection, WP# hardware protection |
| Device Signature | — | Electronic signature for device identification |
| Packaging | — | Tray |
| Brand Source | — | Micron Technology / Alliance Memory, Inc. (second source) |
| Erase/Program Mode | — | Word/byte program, block erase, chip erase |