M29W064FT70N3E vs M29W064FB70N3E 比較
詳細並排比較 M29W064FT70N3E 由 Micron Technology 與 M29W064FB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29W064FT70N3E | M29W064FB70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Flash |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash (Parallel) | NOR Flash, Parallel |
| Density | 64 Mbit | — |
| 組織 | 8 Mb x8 or 4 Mb x16 | — |
| 介面 | Parallel, CFI compliant | Parallel, CFI compliant |
| Access Time | 70 ns | 70 ns |
| 供應電壓 | 2.7 V to 3.6 V | 3.0 V to 3.6 V (3V/3.3V) |
| Boot Block Architecture | Top boot block (FT) | — |
| 工作溫度 | -40C to +85C | -40C to +125C |
| 封裝 | 48-TSOP | 48-Pin TSOP |
| 安裝類型 | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| 記憶體容量 | — | 64 Mbit (8M x 8 / 4M x 16) |
| Boot Block | — | Bottom boot block (FB variant) |
| Organization Switching | — | Byte/Word selectable via BYTE# pin |
| Reset/Power-Down | — | RP# pin |
| Data Protection | — | Block protection, WP# hardware protection |
| Device Signature | — | Electronic signature for device identification |
| Packaging | — | Tray |
| Brand Source | — | Micron Technology / Alliance Memory, Inc. (second source) |
| Erase/Program Mode | — | Word/byte program, block erase, chip erase |