M29W160EB70N3E vs M29W160EB70N3F Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W160EB70N3E disebabkan oleh Micron Technology dan M29W160EB70N3F disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ Aktif
Micron Technology
M29W160EB70N3F M29W160EB70N3F - 16Mbit NOR Flash, 70ns, 48-TSOP | Micron

M29W160EB70N3F - 16Mbit NOR Flash, 70ns, 48-TSOP | Micron

M29W160EB70N3F ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W160EB70N3E M29W160EB70N3F
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan FLASH - NOR FLASH - NOR
Saiz Ingatan 16 Mbit (2M x8, 1M x16) 16 Mbit (2M x8 / 1M x16)
Organisasi 2M x8 / 1M x16 —
Access Time 70 ns 70 ns
Antaramuka Parallel Parallel (Byte/Word-wide)
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Programming Time 10 us (typical) 10 us per byte/word (typical)
Cell Type SLC NOR —
Suhu Operasi -40C to +125C [DATA_NEEDED: operating temperature range]
Kemasan / Case 48-TFSOP (0.724 in, 18.40 mm width) 48-TSOP (0.724 in, 18.40 mm width)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tray Tape & Reel
Speed Grade -70 —
FBGA Code N/A (TSOP package) —
Status RoHS [DATA_NEEDED: RoHS status] —
Aras MSL [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Boot Block Position — Bottom boot block
Bus Configuration — x8 / x16 selectable (BYTE# pin)
Qualification — Automotive, AEC-Q100
Erase Architecture — Block erase (boot block + main blocks)
Common Flash Interface — Yes (CFI compliant)
Reset Input — RESET# hardware reset pin

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